Plasma Technology for Advanced Devices

US patent 5,385,633:
Laser-assisted photothermal chemical etching reactions on silicon occur in these ambients when the incident fluence from an excimer laser at 248 nm exceeds the melt threshold (approximately 0.75 J/cm.sup.2). When incident fluence exceeds the ablation threshold (approximately 2.2 J/cm.sup.2) an undesirable, increased surface roughness is observed.

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YAG laser-assisted etching of silicon for fabricating sensors and actuators
Laser Micromachining of Silicon: A New Technology for Fabricating THz Imaging Arrays
Femtosecond laser-induced formation of spikes on silicon
Direct Etching of Nanostructures in Silicon by Local Melting under Chlorine Exposure
Laser-assisted direct imprint
Energetics of laser and reactive ion etching
Chlorine Assisted Laser Micromachining of Silicon
Semiconductor laser processing with mirror mask
Surface Technology Systems