Plasma Technology for Advanced Devices

Publications

Olivier Joubert:

 

"Plasma Polymerized Methylsilane. I : Characterization of Thin Photosensitive Films for Advanced Lithography Applications"

C. Monget, O. Joubert, R. L. Inglebert, J. Vac.Sci. Technol.B18(5), 2534, (2000)

 

"Plasma polymerized methylsilane. II. Performance for 248 nm lithography"

C. Monget, O. Joubert, J. Vac. Sci. Technol. B 18(2), 785, (2000)

 

"Plasma polymerized methylsilane. III. Process optimization for 193 nm lithography applications"

O. Joubert, D. Fuard, C. Monget, T. Weidman, J. Vac. Sci. Technol. B 18(2), 793, (2000)

 

"Thin gate oxide behavior during plasma patterning of silicon gates"

L. Vallier, L. Desvoivres, M. Bonvalot, O. Joubert, Appl. Phys. Lett. 75(8), 1069, (1999)

 

"Characterization of dielectric etching processes by X-ray photoelectron spectroscopy analyses in high aspect ratio contact holes"

O. Joubert, P. Czuprynski, Jpn. J. Appl. Phys. Vol.38, 6154, (1999)

 

"Sub 0.1 Ám gate etch processes: towards some limitations of the plasma technology"

L. Desvoivres, L. Vallier, O. Joubert, J. Vac.Sci.Technol.B18(1)156, (2000)

 

"Trends in plasma processing for ultra large scale integration technology"

O. Joubert, P. Schiavone, L. Vallier,D. Fuard, L. Desvoivres, P. Schiavone, C. Monget, P. Gouraud, P. Czuprynski, J. Tech. Phys. 41(1, special issue), 41, (2000).

 

"X-ray photoelectron spectroscopy investigation of sidewall passivation films formed during gate etch processes"

L. Desvoivres, L. Vallier, O. Joubert, J. Vac.Sci.TechnolB19(2), 420, (2001)

 

"High Density Plasma etching of low k dielectric polymers in oxygen-based chemistries"

D. Fuard, O. Joubert, L. Vallier, M. Bonvalot, J.Vac Sci TechnolB19(2), 447, (2001)

 

"Etch mechanisms of low dielectric constant polymers in high density plasmas : impact of charging effects on profile distortion"

D. Fuard, O. Joubert, L. Vallier, M. Assous, P. Berruyer, J. Vac.Sci.Technol.B19, 2223, (2001)

 

Thorsten Lill:

 

56. "Reducing damage in Si substrates during gate etching processes by synchronous plasma pulsing"; Camille Petit-Etienne, Maxime Darnon, Laurent Vallier, Erwine Pargon, Gilles Cunge, Franšois Boulard, Olivier Joubert, Samer Banna, Thorsten Lill; J. Vac. Sci. Technol. B28 (2010) 926

 

55. "Mechanisms involved in HBr and Ar cure plasma treatments applied to 193 nm photoresists"; E. Pargon, K. Menguelti, M. Martin, A. Bazin, O. Chaix-Pluchery, C. Sourd, S. Derrough, T. Lill, O. Joubert; J. Appl. Phys.105 (2009) 094902

 

54. “Plasma reactor dry cleaning strategy after TaC, MoN, WSi, W, and WN etching processes”; R. Ramos, G. Cunge, O. Joubert, T. Lill; J. Vac. Sci. Technol. B27 (2009) 113

 

53. "The Cutting Edge of Plasma Etching"; T. Lill. O. Joubert, Science 319 (2008) 1050

 

52. "New Challenges and Trends in Plasma Etch"; Uday Mitra, Thorsten Lill, Ellie Yieh; Proceeddings Semicon China 2008

 

51. “Linewidth roughness transfer measured by critical dimension atomic force microscopy during plasma patterning of polysilicon gate transistors”; E. Pargon, M. Martin, J. Thiault, O. Joubert, J. Foucher, Th. Lill; J. Vac. Sci. Technol. B26 (2008) 1011

 

50. ”Etch's Role in Novel Logic Device Patterning”; Th. Lill. S. Schulze; Semiconductor International, April 2008

 

49. ”High-k etch performance for next-generation logic gate stacks”; R. Wise, W. Yan, Y. Zhang, N. Gani, N. Sun, M. Shen, Th. Lill; Solid State Technology, December 2008

 

48. “Etching mechanisms of HfO2, SiO2, and poly-Si substrates in BCl3 plasmas”; E. Sungauer, E. Pargon, X. Mellhaoui, R. Ramos, G. Cunge, L. Vallier, O. Joubert, Th. Lill; J. Vac. Sci. Technol. B25 (2007) 1640

 

47. "Plasma Etching: From Fundamental Understanding to Productive Solutions"; Th. Lill, S. Deshmukh, U. Mitra, K. Collins, T. StDennis, O. Joubert; Proceedings Semicon Korea 2007

 

46. “Plasma etching of HfO2 at elevated temperatures in chlorine-based chemistry”; M. Helot, T. Chevolleau, L. Vallier, O. Joubert, E. Blanquet, A. Pisch, P. Mangiagalli, T. Lill ; J. Vac. Sci. Technol. A24 (2006) 30

 

45. “Towards a controlled patterning of 10 nm silicon gates in high density plasmas”; E. Pargon, M. Darnon, O. Joubert, T. Chevolleau, and L. Vallier, T. Lill, L. Mollard; J. Vac. Sci. Technol. B23 (2005) 1913

 

44. “Challenges in metal gate etching for logic applications”; Shashank Deshmukh, Jinhan Choi,, Meihua Shen, Yan Du, Kyeong-Tae Lee, Sang In Yi, Jae Bum Yu, Thorsten Lill; SEMI« Technical Symposium: Innovations in Semiconductor Manufacturing, Semicon China 2004

 

43. “Characterization of resist-trimming processes by quasi in situ x-ray photoelectron spectroscopy”; E. Pargon, O. Joubert, S. Xu, Th. Lill; J. Vac. Sci. Technol. B22 (2004) 1869

 

42. “Technology Innovations and Process Integration for Sub-100nm Gate Patterning”; M. Shen, W. Pau, N. Gani, J.P. Wen, S. Deshmukh, Th. Lill, T. Panagopoulos, J. Holland, J. Zhang, H.M. Wu, G. Xing; Proceeding of Semicon China 2004. p.74

 

41. “Mass spectrometry studies of resist trimming processes in HBr/O2 and Cl2/O2 chemistries”; E. Pargon, O. Joubert, T. Chevolleau, G. Cunge, S. Xu and T. Lill; J. Vac. Sci. Technol. B23 (2004) 103

 

40. “Extending the Capabilities of DRAM High Aspect Ratio Trench Etching”; U. Rudolph, E. Weikrnann, A. Kinne, A. Henke, P. VanHolt, S. Wege, A. Khan, S. Parnarthy, F. Schaftlein, T. Lill; Proceeding of the 2004 IEEE/SEMI Advanced Semiconductor Manufacturing Conference, p. 89

 

39. “Chemical topography analyses of silicon gates etched in HBr/Cl2/O2 and HBr/Cl2/O2/CF4 high density plasmas”; L. Vallier, J. Foucher, E. Pargon, O. Joubert, G.Cunge, T. Lill; J. Vac. Sci. Technol. B 21 (2003) 904

 

38. "Recent Trends in Silicon Etching: Controlled Flexibility"; Thorsten Lill, Meihua Shen, Shashank Deshmukh, David Mui, Patrick Leahey, John Holland, Alex Paterson, Dragan Podlesnik; American Physical Society, 56th Gaseous Electronics Conference, October 2003

 

37. "Identifying Front-End Challenges for 90 nm Design"; G. Higashi, Th. Lill; Electronic Engineering Times Asia; September 2003

 

36. “Gate patterning for ultimate CMOS devices”; L. Vallier, J. Foucher, E. Pargon, X. Detter, G. Cunge, and O. Joubert, X. Songlin, T. Lill, and D. Podlesnik, Invited paper DPS Conference 2002, Tokyo, Japan

 

35. “Generating Sub-50nm Poly-Silicon Gates using a Novel Multi-Purpose Patterning Mask and a "Resistless" Trim Process”; Wei Liu, Chris Bencher, David Mui, May Wang, Thorsten Lill; ECS International Semiconductor Technology Conference 2002, September 12-14, 2002, Tokyo

 

34. “Gate Oxide Integrity Issue Caused by Wall-Related Process Drift in Plasma Etching”; Songlin Xu, Thorsten Lill; 2002 7th International Symposium on Plasma- and Process-Induced Damage, p. 56- 59

 

33. “Effect of surface polymerization on plasma and process stability in polycrystalline-silicon etching”; S. Xu, Th. Lill, S. Deshmukh, O. Joubert; J. Vac. Sci. Technol. A20 (2002) 2123

 

32. "Wall-dependent etching characteristics of organic antireflection coating in O2 + halogen/hydrogen halide plasma"; S. Xu, Th. Lill, D. Podlesnik ; J. Vac. Sci. Technol. A 19 (2001) 2893

 

31. "In situ measurement of aspect ratio dependent etch rates of polysilicon in an inductively coupled fluorine plasma"; Th. Lill, M. Grimbergen, D. Mui; J. Vac. Sci. Technol. B 19, (2001) 2123

 

30. "Advanced gate etching: Stopping on very thin gate oxides"; Th. Lill, S. Yuen, F. Ameri, J. Kretz, D. Podlesnik; Proc. 1st Int. Conf. on Semiconductor Technology, vol. 2, pp. 548 - 557.Shanghai, May 2001

 

29. “Interferometry for endpoint prediction during plasma etching of various structures in complementary metal–oxide–semiconductor device fabrication"; N. Layadi, S. J. Molloy, T. C. Esry , Th. Lill, J. Trevor, M. N. Grimbergen, J. Chinn; J. Vac. Sci. Technol. B 17 (1999) 2630

 

28. “Interferometry for Endpoint Prediction In Gate Etching”; Proceedings IEEE/SEMI Advanced Semiconductor Manufacturing Conference & Workshop 1999, p. 227

 

27. "WSix/poly-Si gate stack etching for advanced dRAMapplications; F. Leverd, L. Loisil, T. Lill, J. Trevor, P. Van Holt, L. Van Autryve, T. Varga, J. Chinn; Advanced Semiconductor Manufacturing Conference and Workshop, 1999 IEEE/SEMI, 1999 p. 246

 

26. “Self-clean process and real time etch rate monitor development forsub-quarter micron device etching”; Xue-Yu Qian, Zhi-Wen Sun, Wei-Nan Jiang, M. Grimbergen, Th. Lill, G. Yin; Proceedings of the 5th International Conference on Solid-State and Integrated Circuit Technology, 1998, p. 87

 

25. “Reactive ion etch of high dielectric silicon nitride spacer”; J.M. Regis, A.M. Joshi, M. Yu, Th. Lill; Proceedings of the 8-th Annual IEEE/SEMI Advanced Semiconductor Manufacturing Conference and Workshop, Sept. 10-12, 1997, Cambridge, USA, pp. 252-256

 

24. “Characterization of aspect ratio dependent etching in a MERIE plama for a C4F8/CO based chemistry”; F. Bell, Th. Lill, A. Cuthbertson; Proceedings of the 192th Meeting of the Electrochemical Society, Sept. 1997, Paris

 

23. “C60+ ions in collisions with crystalline surfaces: Kinematics and dynamics”; Th. Lill, H.-G. Busmann, F. Lacher, I.V. Hertel; Int. J. Mod. Phys. B10 (1996) 11-57

 

22. “Influences of film selectivities in the etching of polycide gates”; J.D. Chinn, D. Buseck, Th. Lill, N. Padmapani, J.B. Price, R. Burrows, M. Rooein; Proceedings of the 189th Electrochemical Society Meeting 1996

 

21. Th. Lill, L. v. Autryve, G. Scinner, J.D. Chinn, S. Wege, K. Behrendt, P. Costaganwa, F. Martinique; Proc. 189th Meet. Electrochem. Soc. 1996, p. 263

 

20. “The influence of the surface nature on scattering, fragmentation, and deposition processes in C60+ collisions with solid surfaces”; Th. Lill, H.-G. Busmann, F. Lacher, I.V. Hertel; Chem. Phys. 193 (1995) 199

 

19. “Sputtering of group IIIA elements: Properties of the metal cluster formation mechanism”; Th. Lill, W.F. Calaway, Z. Ma, M.J. Pellin; Surf. Sci. 322 (1995) 361

 

18. “Sputtering of tin and gallium-tin clusters”; Th. Lill, W.F. Calaway, M.J. Pellin; Nucl. Instr. Meth. Phys. B 100 (1995) 361

 

17. “Cluster sputtering from the surface of the liquid gallium – aluminium eutectic alloy”; Th. Lill, W.F. Calaway, M.J. Pellin; J. Appl. Phys. 78 (1995) 505

 

16. “Abundance and depth of origin of neutral and ionic clusters sputtered from a liquid gallium-indium eutectic alloy”; Th. Lill, W.F. Callaway, M.J. Pellin, D.M. Gruen; Phys. Rev. Lett. 73 (1994) 1719

 

15. “Energy partition in C60-diamond-(111)-surface collisions: A molecular-dynamics simulation”; P. Blaudeck, Th. Frauenheim, H.-G. Busmann, Th. Lill; Phys. Rev. B 49 (1994) 11409.

 

14. “Dissociation of C60+ ions in collision with a Ni(100) surface”; Th. Lill, H.-G. Busmann, B. Reif, I.V. Hertel; Surf. Sci. 312 (1994) 124

 

13. “Chemical reactions in collisions of C60+ ions with solid surfaces”; H.-G. Busmann, Th. Lill, F. Lacher, I.V. Hertel; in: Advanced Materials '93, I/B: Magnetic, Fullerene, Dielectric, Ferroelectric, Diamond and Related Materials. Trans. Mat. Res. Soc. Jpn., M. Homma, e. al. eds. Vol. 14B (Elsevier Science B.V. 1994) pp. 1149-1152

 

12. “Energy partion in collisions of C60+ ions with diamond (111) and graphite (0001) surfaces”; H.-G. Busmann, Th. Lill, B. Reif, H.G. Maguire, I.V. Hertel; J. Chem. Phys. 98 (1993) 7574.

 

11. “Instability of C60+ on Ni(100) in collisions”; Th. Lill, H.-G. Busmann, I.V. Hertel; Z. Phys. B91 (1993) 267

 

10. “Fusion and rainbow scattering of C60+ on crystalline fullerite films”; Th. Lill, F. Lacher, H.-G. Busmann, I.V. Hertel; Phys. Rev. Lett. 71 (1993) 3383

 

9. “Collision induced fragmentation and resilience of scattered C60+ fullerenes”; H.-G. Busmann, Th. Lill, B. Reif, I.V. Hertel; Surf. Sci. 272 (1992) 146

 

8. “Dynamics of C60+ surface impact: Rolling, deformation, disintegration, and deposition on HOPG graphite”; Th. Lill, H.-G. Busmann, B. Reif, I.V. Hertel; Appl. Phys. A55 (1992) 461

 

7. “Surface transformations of GaSb substrates during isothermal contact with In-As-Sb and In-As-Sb-Bi melts”; R. Kh. Akchurin, W.A. Shegalin, Th. Lill; Russian Journal of Physics, Chemistry and Mechanics of Surfaces 11 (1991) 61

 

6. “Surface roughening during depth profiling by Secondary Ion mass Spectrometry (SIMS) in GaAlAs and GaAs”; M. Gericke, Th. Lill, M. Trapp, C.-E. Richter, A. Hupfer; Fresenius J. Anal. Chem. 341 (1991) 31

 

5. “Near specular reflection of C60 ions in collision with a HOPG graphite surface”; H.-G. Busmann, Th. Lill, B. Reif, I.V. Hertel; Chem. Phys. Lett. 187 (1991) 459

 

4. “Analysis of the interactions between liquid and solid phases in heteroepitaxy. I. The model of the interaction”; R. Kh. Akchurin, Th. Lill; Russian Journal of Physical Chemistry 64 (1990) 1019

 

3. “Analysis of the interactions between liquid and solid phases in heteroepitaxy. II. Calculations for the indium-arsenic-antimony / indium arsenide systems”; R. Kh. Akchurin, Th. Lill; Russian Journal of Physical Chemistry 64 (1990) 1022

 

2. “Additive shifts of the levels of the lowest unoccupied molecular orbital in CF3-subsittuted systems and their relationship to the topological characteristics according to MNDO calculations”; O.G. Levanda, E.A. Polenov, V.S. Dunyashev, L.V. Aseva, Th. Lill, A.G. Davtayan; Russian Journal of Physical Chemistry 63 (1989) 832

 

1. "Investigations of the possibility and the conditions of the synthesis of quarternary compound crystal in the system GaSb-CdSnSb2"; W.W. Arbenina, G. Buff, Th. Lill; "Chrystallization and properties of crystals"; p. 150, Publishing House of the Polytechnical Institute Novocherkask, 1989

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