Plasma Technology for Advanced Devices

Clarycon News Archive: STM

STM announces that Crolles2 would complete the development of 45-nm CMOS process technology during 2007 but there would then be a "discontinuation" in the role of the Crolles development center and pilot fab.

STM and LETI report at the IEDM conference a double gate device based on their SON (Silicon On Nothing) process. Source: IEDM

STMicroelectronics discloses that it plans to deploy 193- and 157-nm technology in its production fabs. The company is also experimenting with direct-write, electron-beam technology for small-lot chip production at the 65-nm node and beyond. Source: Silicon Strategies


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