Plasma Technology for Advanced Devices

RIE lag in poly-Si and silicide etching

RIE lag or Aspect Ratio Dependent Etching (ARDE) is particularly important for high aspect ratio gate stackes in dRAM and flash applications. The RIE lag effect can be effectively impacted by the choice of a suitable gas additive. The underlaying mechanisms are not known. For general information on the origin of RIE lag, click here.

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