Plasma Technology for Advanced Devices
Temperature Effects in Plasma Etching
The wafer surface temperature depends primarily on the chuck temperature, the ion density and ion energy and the exothermicity of the etching reaction. Surface temperature influences etching processes (slide 1):
Tight control of the wafer surface temperature is an engineering challenges caused by sudden changes in the plasma condition during the transition between process steps. In addition, the true substrate temperature is difficult to monitor.
Slide 2 summarizes the findings on th selectivities and profile control for silicon etching in a SF6 plasma by S. Tachi et al. (Appl. Phys. Lett. 52 (1988) 617):